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      N-Si/sub x/C/sub 1-x//P-Si diode fabricated using silane, 1,1,1-trichloroethane and arsine at low temperatures

      IEEE Electron Device Letters

      Institute of Electrical and Electronics Engineers (IEEE)

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          Journal
          IEEE Electron Device Letters
          IEEE Electron Device Lett.
          Institute of Electrical and Electronics Engineers (IEEE)
          0741-3106
          1558-0563
          September 1991
          September 1991
          : 12
          : 9
          : 477-479
          Article
          10.1109/55.116923
          © 1991
          Product

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