N-Si/sub x/C/sub 1-x//P-Si diode fabricated using silane, 1,1,1-trichloroethane and arsine at low temperatures

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Journal

Title: IEEE Electron Device Letters

Abbreviated Title: IEEE Electron Device Lett.

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 0741-3106

ISSN (Electronic): 1558-0563

Publication date Created: September 1991

Publication date (Print): September 1991

Volume: 12

Issue: 9

Pages: 477-479

Article

DOI: 10.1109/55.116923

SO-VID: a5b5e25e-9207-46e0-9bc3-39f8dd85d32d

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