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      Contrasting Elastic Properties of Heavily B- and N-doped Graphene, with Random Distributions Including Aggregates

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          Abstract

          We focused on elastic properties of B- and N-doped graphene in wide range of concentrations up to 20%. The Young's, bulk and shear moduli and Poisson's ratio have been calculated by means of the density functional theory for a representative set of supercells with disordered impurity patterns including aggregates. In contrast to earlier work, it is demonstrated that doping with nitrogen even strengthens the graphene layers, whereas incorporation of boron induces large structural and morphological changes seen in simulated STM images. Young's and shear moduli increase or decrease with the doping strength for nitrogen or boron, respectively, while bulk modulus and Poisson's ratio exhibit opposite trends. Elastic properties of samples for both types of impurities are strongly related to the electronic structures, especially for heavy doping (>12%). Local arrangements of dopants and an agregation or separation of impurities play crucial role in the determination of stiffness in the investigated systems. Interestingly, these findings are opossed for B- and N-contained samples.

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          Generalized Gradient Approximation Made Simple

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            Electromechanical resonators from graphene sheets.

            Nanoelectromechanical systems were fabricated from single- and multilayer graphene sheets by mechanically exfoliating thin sheets from graphite over trenches in silicon oxide. Vibrations with fundamental resonant frequencies in the megahertz range are actuated either optically or electrically and detected optically by interferometry. We demonstrate room-temperature charge sensitivities down to 8 x 10(-4) electrons per root hertz. The thinnest resonator consists of a single suspended layer of atoms and represents the ultimate limit of two-dimensional nanoelectromechanical systems.
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              Strain-induced pseudo-magnetic fields greater than 300 tesla in graphene nanobubbles.

              Recent theoretical proposals suggest that strain can be used to engineer graphene electronic states through the creation of a pseudo-magnetic field. This effect is unique to graphene because of its massless Dirac fermion-like band structure and particular lattice symmetry (C3v). Here, we present experimental spectroscopic measurements by scanning tunneling microscopy of highly strained nanobubbles that form when graphene is grown on a platinum (111) surface. The nanobubbles exhibit Landau levels that form in the presence of strain-induced pseudo-magnetic fields greater than 300 tesla. This demonstration of enormous pseudo-magnetic fields opens the door to both the study of charge carriers in previously inaccessible high magnetic field regimes and deliberate mechanical control over electronic structure in graphene or so-called "strain engineering."
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                Author and article information

                Journal
                08 April 2013
                2013-09-13
                Article
                10.1021/jp403552k
                1304.2438
                a6103248-deb6-40de-8086-58c072632284

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

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                Custom metadata
                J. Phys. Chem. C, 117(39), 20229-20235 (2013)
                cond-mat.mtrl-sci cond-mat.mes-hall

                Condensed matter,Nanophysics
                Condensed matter, Nanophysics

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