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      Strain measurement of ultrathin epitaxial films using electron diffraction techniques

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      Journal of Applied Physics
      AIP Publishing

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          Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering

          Among many remarkable qualities of graphene, its electronic properties attract particular interest due to a massless chiral character of charge carriers, which leads to such unusual phenomena as metallic conductivity in the limit of no carriers and the half-integer quantum Hall effect (QHE) observable even at room temperature [1-3]. Because graphene is only one atom thick, it is also amenable to external influences including mechanical deformation. The latter offers a tempting prospect of controlling graphene's properties by strain and, recently, several reports have examined graphene under uniaxial deformation [4-8]. Although the strain can induce additional Raman features [7,8], no significant changes in graphene's band structure have been either observed or expected for realistic strains of approx. 10% [9-11]. Here we show that a designed strain aligned along three main crystallographic directions induces strong gauge fields [12-14] that effectively act as a uniform magnetic field exceeding 10 T. For a finite doping, the quantizing field results in an insulating bulk and a pair of countercirculating edge states, similar to the case of a topological insulator [15-20]. We suggest realistic ways of creating this quantum state and observing the pseudo-magnetic QHE. We also show that strained superlattices can be used to open significant energy gaps in graphene's electronic spectrum.
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            Coherent, atomically thin transition-metal dichalcogenide superlattices with engineered strain

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              Oscillations in the surface structure of Sn-doped GaAs during growth by MBE

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                February 28 2019
                February 28 2019
                : 125
                : 8
                : 082401
                Affiliations
                [1 ]Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, 110, 8th Street, Troy, New York 12180, USA
                Article
                10.1063/1.5049357
                a6175d5b-36d4-4074-96f3-77ef04005e1d
                © 2019
                History

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