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      Ion implantation into Nb/Nb oxide/PbAuIn Josephson tunnel junctions

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      Applied Physics Letters
      AIP Publishing

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          Isolation of junction devices in GaAs using proton bombardment

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            Tunneling in lead‐lead oxide‐lead junctions

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              Theory of metal‐insulator‐metal tunneling for a simple two‐band model

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                October 1984
                October 1984
                : 45
                : 7
                : 796-798
                Article
                10.1063/1.95369
                a6559f2d-aa9a-4d7c-a59c-c39605b66251
                © 1984
                History

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