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      Highly optimized tight-binding model of silicon

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          Computer simulation of local order in condensed phases of silicon

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            Ab initiomulticenter tight-binding model for molecular-dynamics simulations and other applications in covalent systems

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              Point defects and dopant diffusion in silicon

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                Author and article information

                Journal
                PRBMDO
                Physical Review B
                Phys. Rev. B
                American Physical Society (APS)
                0163-1829
                1095-3795
                January 1997
                January 1997
                : 55
                : 3
                : 1528-1544
                Article
                10.1103/PhysRevB.55.1528
                a735d7c5-32be-4470-88da-23adeb1a2908
                © 1997

                http://link.aps.org/licenses/aps-default-license

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