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      Band offsets of high K gate oxides on III-V semiconductors

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      Journal of Applied Physics
      AIP Publishing

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          High-κ gate dielectrics: Current status and materials properties considerations

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            Band offsets of wide-band-gap oxides and implications for future electronic devices

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              A Semi-empirical tight-binding theory of the electronic structure of semiconductors†

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                July 2006
                July 2006
                : 100
                : 1
                : 014111
                Article
                10.1063/1.2213170
                a913fd93-7a77-4def-b742-2def35ac2438
                © 2006
                History

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