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      Atomic layer deposition and properties of ZrO 2/Fe 2O 3 thin films

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          Abstract

          Thin solid films consisting of ZrO 2 and Fe 2O 3 were grown by atomic layer deposition (ALD) at 400 °C. Metastable phases of ZrO 2 were stabilized by Fe 2O 3 doping. The number of alternating ZrO 2 and Fe 2O 3 deposition cycles were varied in order to achieve films with different cation ratios. The influence of annealing on the composition and structure of the thin films was investigated. Additionally, the influence of composition and structure on electrical and magnetic properties was studied. Several samples exhibited a measurable saturation magnetization and most of the samples exhibited a charge polarization. Both phenomena were observed in the sample with a Zr/Fe atomic ratio of 2.0.

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          Why Are There so Few Magnetic Ferroelectrics?

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            Zirconium dioxide thin films deposited by ALE using zirconium tetrachloride as precursor

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              • Record: found
              • Abstract: not found
              • Article: not found

              Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric

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                Author and article information

                Contributors
                Role: Associate Editor
                Journal
                Beilstein J Nanotechnol
                Beilstein J Nanotechnol
                Beilstein Journal of Nanotechnology
                Beilstein-Institut (Trakehner Str. 7-9, 60487 Frankfurt am Main, Germany )
                2190-4286
                2018
                10 January 2018
                : 9
                : 119-128
                Affiliations
                [1 ]Institute of Physics, University of Tartu, W. Ostwald 1, 50411 Tartu, Estonia
                [2 ]Department of Chemistry, University of Helsinki, P. O. Box 55, FI-00014 Helsinki, Finland
                [3 ]National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, 12618 Tallinn, Estonia
                [4 ]Department of Electronics, University of Valladolid, Paseo Belén 15, 47011 Valladolid, Spain
                Article
                10.3762/bjnano.9.14
                5789441
                Copyright © 2018, Kalam et al.; licensee Beilstein-Institut.

                This is an Open Access article under the terms of the Creative Commons Attribution License ( http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

                The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: ( http://www.beilstein-journals.org/bjnano)

                Categories
                Full Research Paper
                Nanoscience
                Nanotechnology

                thin films, atomic layer deposition, metal oxides

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