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      Effect of strain on electronic and thermoelectric properties of few layers to bulk MoS2

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      Nanotechnology
      IOP Publishing

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          Most cited references47

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          Generalized Gradient Approximation Made Simple

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            Emerging photoluminescence in monolayer MoS2.

            Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS(2) provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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              BoltzTraP. A code for calculating band-structure dependent quantities

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                Author and article information

                Journal
                Nanotechnology
                Nanotechnology
                IOP Publishing
                0957-4484
                1361-6528
                November 21 2014
                November 21 2014
                October 30 2014
                : 25
                : 46
                : 465701
                Article
                10.1088/0957-4484/25/46/465701
                a9713126-67ad-476d-a636-bcb9f722f810
                © 2014

                http://iopscience.iop.org/info/page/text-and-data-mining

                http://iopscience.iop.org/page/copyright

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