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      Evidence for spin to charge conversion in GeTe(111)

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          Spin Hall effect

           J. E. Hirsch (1999)
          It is proposed that when a charge current circulates in a paramagnetic metal a transverse spin imbalance will be generated, giving rise to a 'spin Hall voltage'. Similarly, that when a spin current circulates a transverse charge imbalance will be generated, hence a Hall voltage, in the absence of charge current and magnetic field. Based on these principles we propose an experiment to generate and detect a spin current in a paramagnetic metal.
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            Giant Rashba-type spin splitting in bulk BiTeI.

            There has been increasing interest in phenomena emerging from relativistic electrons in a solid, which have a potential impact on spintronics and magnetoelectrics. One example is the Rashba effect, which lifts the electron-spin degeneracy as a consequence of spin-orbit interaction under broken inversion symmetry. A high-energy-scale Rashba spin splitting is highly desirable for enhancing the coupling between electron spins and electricity relevant for spintronic functions. Here we describe the finding of a huge spin-orbit interaction effect in a polar semiconductor composed of heavy elements, BiTeI, where the bulk carriers are ruled by large Rashba-like spin splitting. The band splitting and its spin polarization obtained by spin- and angle-resolved photoemission spectroscopy are well in accord with relativistic first-principles calculations, confirming that the spin splitting is indeed derived from bulk atomic configurations. Together with the feasibility of carrier-doping control, the giant-Rashba semiconductor BiTeI possesses excellent potential for application to various spin-dependent electronic functions. © 2011 Macmillan Publishers Limited. All rights reserved
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              Strong Spin-Orbit Splitting on Bi Surfaces

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                Author and article information

                Journal
                APL Materials
                APL Materials
                AIP Publishing
                2166-532X
                March 2016
                March 2016
                : 4
                : 3
                : 032501
                Affiliations
                [1 ]Dipartimento di Fisica, Politecnico di Milano, Via Colombo 81, 20133 Milano, Italy
                [2 ]IFN-CNR, c/o Politecnico di Milano, Via Colombo 81, 20133 Milano, Italy
                [3 ]Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France
                [4 ]Institut Jean Lamour, UMR CNRS-Université de Lorraine, 54506 Vandouevre lès Nancy, France
                [5 ]Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
                [6 ]Université Grenoble Alpes and CEA, INAC–SP2M, F-38000 Grenoble, France
                Article
                10.1063/1.4941276
                © 2016
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