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      Mg-doped beta-Ga2O3 films deposited by plasma-enhanced atomic layer deposition system for metal-semiconductor-metal ultraviolet C photodetectors

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      Materials Science in Semiconductor Processing
      Elsevier BV

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          High gain Ga_2O_3 solar-blind photodetectors realized via a carrier multiplication process

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            Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

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              High Responsivity β-Ga2O3 Metal–Semiconductor–Metal Solar-Blind Photodetectors with Ultraviolet Transparent Graphene Electrodes

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                Author and article information

                Contributors
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                Journal
                Materials Science in Semiconductor Processing
                Materials Science in Semiconductor Processing
                Elsevier BV
                13698001
                May 2022
                May 2022
                : 142
                : 106471
                Article
                10.1016/j.mssp.2022.106471
                aa612a10-c50b-4d4d-abb4-1b304058c310
                © 2022

                https://www.elsevier.com/tdm/userlicense/1.0/

                https://doi.org/10.15223/policy-017

                https://doi.org/10.15223/policy-037

                https://doi.org/10.15223/policy-012

                https://doi.org/10.15223/policy-029

                https://doi.org/10.15223/policy-004

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