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      A 0.25-μm 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

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          Journal
          IEEE Journal of Solid-State Circuits
          IEEE J. Solid-State Circuits
          Institute of Electrical and Electronics Engineers (IEEE)
          0018-9200
          November 2002
          November 2002
          : 37
          : 11
          : 1472-1478
          Article
          10.1109/JSSC.2002.802357
          aa6cec19-8130-4235-998d-eb35cd582198
          © 2002
          History

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