12
views
0
recommends
+1 Recommend
0 collections
    0
    shares
      • Record: found
      • Abstract: found
      • Article: found
      Is Open Access

      Band Structure of EuO/Si Spin Contact: Justification for Silicon Spintronics

      Preprint

      Read this article at

      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Abstract

          Silicon spintronics requires injection of spin-polarized carriers into Si. An emerging approach is direct electrical injection from a ferromagnetic semiconductor - EuO being the prime choice. Functionality of the EuO/Si spin contact is determined by the interface band alignment. In particular, the band offset should fall within the 0.5-2 eV range. We employ soft-X-ray ARPES to probe the electronic structure of the buried EuO/Si interface with momentum resolution and chemical specificity. The band structure reveals a conduction band offset of 1.0 eV attesting the technological potential of the EuO/Si system.

          Related collections

          Author and article information

          Journal
          2016-03-15
          Article
          1603.04666
          aaa57313-ea30-41a8-8d4a-ad434f53a050

          http://arxiv.org/licenses/nonexclusive-distrib/1.0/

          History
          Custom metadata
          cond-mat.mtrl-sci cond-mat.mes-hall

          Condensed matter,Nanophysics
          Condensed matter, Nanophysics

          Comments

          Comment on this article