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      Transparent thin-film transistors with zinc indium oxide channel layer

      , , , , , , ,
      Journal of Applied Physics
      AIP Publishing

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          Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor.

          We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of approximately 106 and a field-effect mobility of approximately 80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.
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            ZnO-based transparent thin-film transistors

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              Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                March 15 2005
                March 15 2005
                : 97
                : 6
                : 064505
                Article
                10.1063/1.1862767
                aab48512-1dc6-47b1-a48f-cffd60f38df3
                © 2005
                History

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