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      Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well

      , , , , , , ,
      Applied Physics Letters
      AIP Publishing

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          Temperature dependence of the energy gap in semiconductors

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            “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells

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              Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                April 17 2000
                April 17 2000
                : 76
                : 16
                : 2241-2243
                Article
                10.1063/1.126308
                aabb04ff-2913-4c92-af64-418c5a758183
                © 2000
                History

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