Effects of carrier concentration on the dielectric function of ZnO:Ga andIn2O3:Snstudied by spectroscopic ellipsometry: Analysis of free-carrier and band-edge absorption

Kondo, Michio; Fujiwara, Hiroyuki

doi:10.1103/PhysRevB.71.075109

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Effects of carrier concentration on the dielectric function of ZnO:Ga andIn2O3:Snstudied by spectroscopic ellipsometry: Analysis of free-carrier and band-edge absorption

Author(s): Hiroyuki Fujiwara , Michio Kondo

Publication date (Print): February 2005

Journal: Physical Review B

Publisher: American Physical Society (APS)

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Journal ID (publisher-id): PRBMDO

Title: Physical Review B

Abbreviated Title: Phys. Rev. B

Publisher: American Physical Society (APS)

ISSN (Print): 1098-0121

ISSN (Electronic): 1550-235X

Publication date Created: February 2005

Publication date (Print): February 2005

Volume: 71

Issue: 7

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DOI: 10.1103/PhysRevB.71.075109

SO-VID: ab108b7f-f035-435e-ab38-5095d3ae0ecc

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Effects of carrier concentration on the dielectric function of ZnO:Ga andIn2O3:Snstudied by spectroscopic ellipsometry: Analysis of free-carrier and band-edge absorption

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