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      Separating Inverse spin Hall voltage and spin rectification voltage by inverting spin injection direction

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          Abstract

          We develop a method for universally resolving the important issue of separating the inverse spin Hall effect (ISHE) from spin rectification effect (SRE) signal. This method is based on the consideration that the two effects depend on the spin injection direction: The ISHE is an odd function of the spin injection direction while the SRE is independent on it. Thus, inversion of the spin injection direction changes the ISHE voltage signal, while SRE voltage remains. It applies generally to analyzing the different voltage contributions without fitting them to special line shapes. This fast and simple method can be used in a wide frequency range, and has the flexibility of sample preparation.

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          Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices

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            Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange

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              Spin Hall effect

              It is proposed that when a charge current circulates in a paramagnetic metal a transverse spin imbalance will be generated, giving rise to a 'spin Hall voltage'. Similarly, that when a spin current circulates a transverse charge imbalance will be generated, hence a Hall voltage, in the absence of charge current and magnetic field. Based on these principles we propose an experiment to generate and detect a spin current in a paramagnetic metal.
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                Author and article information

                Journal
                10.1063/1.4943517
                1512.01870

                Condensed matter
                Condensed matter

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