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      A 128-kb FeRAM macro for contact/contactless smart-card microcontrollers

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          A 256 kb nonvolatile ferroelectric memory at 3 V and 100 ns

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            A 3.3-V 4-Mb nonvolatile ferroelectric RAM with a selectively-driven double-pulsed plate read/write-back scheme

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              A 60 ns 1 Mb nonvolatile ferroelectric memory with non-driven cell plate line write/read scheme

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                Author and article information

                Journal
                IEEE Journal of Solid-State Circuits
                IEEE J. Solid-State Circuits
                Institute of Electrical and Electronics Engineers (IEEE)
                0018-9200
                August 2002
                August 2002
                : 37
                : 8
                : 1073-1079
                Article
                10.1109/JSSC.2002.800930
                ab8f8013-0272-40f1-841a-a39c5ae45ff5
                © 2002
                Product
                Self URI (article page): http://ieeexplore.ieee.org/document/1020247/

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