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      Fully coherent growth of Ge on free-standing Si(001) nanomesas

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          Defects in epitaxial multilayers

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            Lattice Parameter and Density in Germanium-Silicon Alloys1

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              Dislocations in strained-layer epitaxy: theory, experiment, and applications

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                Author and article information

                Journal
                PRBMDO
                Physical Review B
                Phys. Rev. B
                American Physical Society (APS)
                1098-0121
                1550-235X
                January 2014
                January 2 2014
                : 89
                : 1
                Article
                10.1103/PhysRevB.89.014101
                ac06ee61-7583-40b1-b9b5-af789f7aead6
                © 2014

                http://link.aps.org/licenses/aps-default-license

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