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      Luminescence associated with stacking faults in GaN

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          Band parameters for nitrogen-containing semiconductors

          I Vurgaftman, J R Meyer (2003)
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            Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

            Shigetoshi Sota, Tetsuya Takeuchi, Maki Katsuragawa … (1997)
            Article 0 comments Cited 311 times – based on 0 reviews     Review now
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              Luminescence properties of defects in GaN

              Michael A. Reshchikov, Hadis Morkoç (2005)
              Article 0 comments Cited 300 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Physics D: Applied Physics
                Abbreviated Title: J. Phys. D: Appl. Phys.
                Publisher: IOP Publishing
                ISSN (Print): 0022-3727
                ISSN (Electronic): 1361-6463
                Publication date Created: October 22 2014
                Publication date (Print): October 22 2014
                Publication date (Electronic): October 01 2014
                Volume: 47
                Issue: 42
                Page: 423001
                Article
                DOI: 10.1088/0022-3727/47/42/423001
                SO-VID: acd38ff1-7c91-42ed-9f2d-8df1ca8c1228
                Copyright © © 2014
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                http://iopscience.iop.org/info/page/text-and-data-mining

                http://iopscience.iop.org/page/copyright

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