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      High-quality Ge epilayers on Si with low threading-dislocation densities

      , , , , , ,
      Applied Physics Letters
      AIP Publishing

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          Dislocations in strained-layer epitaxy: theory, experiment, and applications

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            Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si

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              Dislocation density reduction in heteroepitaxial III-V compound films on Si substrates for optical devices

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                November 08 1999
                November 08 1999
                : 75
                : 19
                : 2909-2911
                Article
                10.1063/1.125187
                acf3cdd3-a5bf-4326-b3ab-46ec9964248b
                © 1999
                History

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