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      Preparation, characterization, and electrical properties of epitaxial NbO2 thin film lateral devices

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          Abstract

          Epitaxial NbO2 (110) films, 20 nm thick, were grown by pulsed laser deposition on Al2O3 (0001) substrates. The Ar/O2 total pressure during growth was varied to demonstrate the gradual transformation between NbO2 and Nb2O5 phases, which was verified using x-ray diffraction, x-ray photoelectron spectroscopy, and optical absorption measurements. Electric resistance threshold switching characteristics were studied in a lateral geometry using interdigitated Pt top electrodes in order to preserve the epitaxial crystalline quality of the films. Volatile and reversible transitions between high and low resistance states were observed in epitaxial NbO2 films, while irreversible transitions were found in case of Nb2O5 phase. Electric field pulsed current measurements confirmed thermally-induced threshold switching.

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          Journal
          2015-06-22
          2015-07-27
          Article
          10.1088/0022-3727/48/33/335308
          1506.06640
          ad18b4dd-c32c-4b48-89be-226f9cbe5663

          http://arxiv.org/licenses/nonexclusive-distrib/1.0/

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          J. Phys. D: Appl. Phys. 48, 335308 (2015)
          This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics D: Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/0022-3727/48/33/335308
          cond-mat.mtrl-sci

          Condensed matter

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