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      The rise of graphene

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          Abstract

          Graphene is a rapidly rising star on the horizon of materials science and condensed matter physics. This strictly two-dimensional material exhibits exceptionally high crystal and electronic quality and, despite its short history, has already revealed a cornucopia of new physics and potential applications, which are briefly discussed here. Whereas one can be certain of the realness of applications only when commercial products appear, graphene no longer requires any further proof of its importance in terms of fundamental physics. Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed matter physics, where quantum relativistic phenomena, some of which are unobservable in high energy physics, can now be mimicked and tested in table-top experiments. More generally, graphene represents a conceptually new class of materials that are only one atom thick and, on this basis, offers new inroads into low-dimensional physics that has never ceased to surprise and continues to provide a fertile ground for applications.

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          Most cited references62

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          Electric Field Effect in Atomically Thin Carbon Films

          We report a naturally-occurring two-dimensional material (graphene that can be viewed as a gigantic flat fullerene molecule, describe its electronic properties and demonstrate all-metallic field-effect transistor, which uniquely exhibits ballistic transport at submicron distances even at room temperature.
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            Two-Dimensional Gas of Massless Dirac Fermions in Graphene

            Electronic properties of materials are commonly described by quasiparticles that behave as non-relativistic electrons with a finite mass and obey the Schroedinger equation. Here we report a condensed matter system where electron transport is essentially governed by the Dirac equation and charge carriers mimic relativistic particles with zero mass and an effective "speed of light" c* ~10^6m/s. Our studies of graphene - a single atomic layer of carbon - have revealed a variety of unusual phenomena characteristic of two-dimensional (2D) Dirac fermions. In particular, we have observed that a) the integer quantum Hall effect in graphene is anomalous in that it occurs at half-integer filling factors; b) graphene's conductivity never falls below a minimum value corresponding to the conductance quantum e^2/h, even when carrier concentrations tend to zero; c) the cyclotron mass m of massless carriers with energy E in graphene is described by equation E =mc*^2; and d) Shubnikov-de Haas oscillations in graphene exhibit a phase shift of pi due to Berry's phase.
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              Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene

              When electrons are confined in two-dimensional (2D) materials, quantum mechanically enhanced transport phenomena, as exemplified by the quantum Hall effects (QHE), can be observed. Graphene, an isolated single atomic layer of graphite, is an ideal realization of such a 2D system. Here, we report an experimental investigation of magneto transport in a high mobility single layer of graphene. Adjusting the chemical potential using the electric field effect, we observe an unusual half integer QHE for both electron and hole carriers in graphene. Vanishing effective carrier masses is observed at Dirac point in the temperature dependent Shubnikov de Haas oscillations, which probe the 'relativistic' Dirac particle-like dispersion. The relevance of Berry's phase to these experiments is confirmed by the phase shift of magneto-oscillations, related to the exceptional topology of the graphene band structure.
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                Author and article information

                Journal
                26 February 2007
                Article
                cond-mat/0702595
                ad7e746d-619b-4986-8946-6996cd00a49a
                History
                Custom metadata
                Nature Materials 6, 183-191 (2007)
                progress review
                cond-mat.mtrl-sci cond-mat.mes-hall

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