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      Layered transition metal dichalcogenides for electrochemical energy generation and storage

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          Abstract

          Layered transition metal dichalcogenides (TMDs) (MoS 2, MoSe 2, WS 2, WSe 2, etc.) are a chemically diverse class of compounds having remarkable electrochemical properties.

          Layered transition metal dichalcogenides (TMDs) (MoS 2, MoSe 2, WS 2, WSe 2, etc.) are a chemically diverse class of compounds having band gaps from 0 to ∼2 eV and remarkable electrochemical properties. The band gaps and electrochemical properties of TMDs can be tuned by exchanging the transition metal or chalcogenide elements. After a brief description of the most commonly followed synthetic routes to prepare TMDs, we wish to highlight in this review the diverse electrochemical applications of MoS 2, a representative and well-studied TMD, which range from its use as catalysts in hydrogen evolution reactions to its adoption in supercapacitors, batteries, solar cells, and hydrogen storage.

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          Most cited references53

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          Metal dichalcogenide nanosheets: preparation, properties and applications.

          Two-dimensional (2D) nanomaterials have received much attention in recent years, because of their unusual properties associated with their ultra-thin thickness and 2D morphology. Besides graphene which has aroused tremendous research interest, other types of 2D nanomaterials such as metal dichalcogenides have also been studied and applied in various applications including electronics, optoelectronics, energy storage devices, and so on. In this tutorial review, we will take MoS(2) as a typical example to introduce the latest research development of 2D inorganic nanomaterials with emphasis on their preparation methods, properties and applications.
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            Large-area vapor-phase growth and characterization of MoS(2) atomic layers on a SiO(2) substrate.

            Atomic-layered MoS(2) is synthesized directly on SiO(2) substrates by a scalable chemical vapor deposition method. The large-scale synthesis of an atomic-layered semiconductor directly on a dielectric layer paves the way for many facile device fabrication possibilities, expanding the important family of useful mono- or few-layer materials that possess exceptional properties, such as graphene and hexagonal boron nitride (h-BN). Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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              Is Open Access

              Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition

              Large-area MoS2 atomic layers are synthesized on SiO2 substrates by chemical vapor deposition using MoO3 and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS2 monolayer. The TEM images verify that the synthesized MoS2 sheets are highly crystalline.
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                Author and article information

                Journal
                JMCAET
                J. Mater. Chem. A
                J. Mater. Chem. A
                Royal Society of Chemistry (RSC)
                2050-7488
                2050-7496
                2014
                2014
                : 2
                : 24
                : 8981-8987
                Article
                10.1039/C4TA00652F
                ae6cbd1a-bb1f-430c-a893-d52d835b731d
                © 2014
                History

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