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Highly (0001)-oriented Al-doped ZnO polycrystalline films on amorphous glass substrates

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      X-ray line broadening from filed aluminium and wolfram

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        Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

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          GaN Growth Using GaN Buffer Layer

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            Author and article information

            Journal
            Journal of Applied Physics
            Journal of Applied Physics
            AIP Publishing
            0021-8979
            1089-7550
            September 28 2016
            September 28 2016
            : 120
            : 12
            : 125302
            10.1063/1.4962943
            © 2016
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