FeRAM retention analysis method based on memory cell read signal voltage measurement

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Journal

Title: IEEE Transactions on Semiconductor Manufacturing

Abbreviated Title: IEEE Trans. Semicond. Manufact.

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 08946507

Publication date (Print): May 2002

Volume: 15

Issue: 2

Pages: 201-208

Article

DOI: 10.1109/66.999593

SO-VID: af411f28-a3ca-4a1e-8844-8c9a96322e7d

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