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      Spectral analysis of line edge and line-width roughness with long-range correlation

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      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          Matching properties of MOS transistors

          M.J.M. Pelgrom, A.P.G. Welbers, A.C.J. Duinmaijer (1989)
          Article 0 comments Cited 308 times – based on 0 reviews     Review now
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            Characterisation and modeling of mismatch in MOS transistors for precision analog design

            R.A. Hadaway, M.A. Copeland, K.R. Lakshmikumar (1986)
            Article 0 comments Cited 89 times – based on 0 reviews     Review now
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              Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's

              A. Toriumi, T Mizuno, J. Okumtura (1994)
              Article 0 comments Cited 69 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: August 2010
                Publication date (Print): August 2010
                Volume: 108
                Issue: 3
                Page: 034908
                Article
                DOI: 10.1063/1.3466777
                SO-VID: b1671ab4-c8ba-4702-b069-f50b87241a91
                Copyright © © 2010
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