A new method to estimate an in-plane conduction anisotropy in a quasi-two-dimensional (q2D) layered conductor by measuring the inter-layer transverse magnetoresistance is proposed. We applied this method to layered organic conductors β-(BEDT-TTF) 2X (BEDT-TTF = bis(ethylenedithio)tetrathiafulvalene, C 10H 8S 8; X = IBr 2, I 2Br) by applying magnetic field rotating within the basal plane at 4.2 K. We found the anisotropic behaviour of carrier mobility μ. From this, anomalous distribution of carrier lifetime τ on the Fermi surface is derived, by the use of Fermi surface data reported for the materials. Calculations of the non-uniform susceptibility χ 0( q ) suggest that carrier scattering is enhanced at specific k -points related to partial nesting of the Fermi surface. The present method is thus demonstrated to be an efficient experimental tool to elucidate anisotropic carrier dynamics in q2D conductors.