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Abstract
We review progress in developing epitaxial graphene as a material for carbon electronics.
In particular, improvements in epitaxial graphene growth, interface control and the
understanding of multilayer epitaxial graphene's electronic properties are discussed.
Although graphene grown on both polar faces of SiC is addressed, our discussions will
focus on graphene grown on the (000-1) C-face of SiC. The unique properties of C-face
multilayer epitaxial graphene have become apparent. These films behave electronically
like a stack of nearly independent graphene sheets rather than a thin Bernal-stacked
graphite sample. The origin of multilayer graphene's electronic behavior is its unique
highly-ordered stacking of non-Bernal rotated graphene planes. While these rotations
do not significantly affect the inter-layer interactions, they do break the stacking
symmetry of graphite. It is this broken symmetry that causes each sheet to behave
like an isolated graphene plane.