- Record: found
- Abstract: not found
- Article: not found
Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers
K. L. Kavanagh ,
M. A. Capano ,
L. W. Hobbs ,
J. C. Barbour ,
P. M. J. Marée ,
W. Schaff ,
J. W. Mayer ,
D. Pettit ,
J. M. Woodall ,
J. A. Stroscio ,
R. M. Feenstra
November 15 1988
November 15 1988
Read this article at
There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.
Related collections
Most cited references15
- Record: found
- Abstract: not found
- Article: not found
Ion beam crystallography of surfaces and interfaces
J.F. van der Veen (1985)
- Record: found
- Abstract: not found
- Article: not found
Generation of misfit dislocations in semiconductors
P. M. J. Marée, J. Barbour, J. F. van der Veen … (1987)
- Record: found
- Abstract: not found
- Article: not found
Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy
T. G. Andersson, A Uddin, V. D. Kulakovskii … (1987)