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      Near-interface charged dislocations in AlGaN/GaN bilayer heterostructures

      Author(s): 1 , 1 , 2
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Dislocation Scattering in GaN

          D. Look, J. Sizelove (1999)
          Article 0 comments Cited 136 times – based on 0 reviews     Review now
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            Charge accumulation at a threading edge dislocation in gallium nitride

            E. B. Stechel, A F Wright, K. Leung (1999)
            Article 0 comments Cited 48 times – based on 0 reviews     Review now
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              Structure and mechanical properties of Cu-X (X = Nb,Cr,Ni) nanolayered composites

              M Nastasi, H. Kung, Y.C Lu … (1998)
              Article 0 comments Cited 39 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: September 08 2014
                Publication date (Print): September 08 2014
                Volume: 105
                Issue: 10
                Page: 102102
                Affiliations
                [1 ]Computer Modeling and Simulation Group, University of Akron, Akron, Ohio 44325, USA
                [2 ]School of Aerospace, Beijing Institute of Technology, Beijing 100081, China
                Article
                DOI: 10.1063/1.4895511
                SO-VID: b42c8e4f-8111-4ced-94c7-da879b0f9603
                Copyright © © 2014
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