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      Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature.

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          Abstract

          Single- and multilayer MoS(2) films are deposited onto Si/SiO(2) using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single-layer MoS(2) device shows a rapid response after exposure to NO, the current was found to be unstable. The two-, three-, and four-layer MoS(2) devices show both stable and sensitive responses to NO down to a concentration of 0.8 ppm.

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          Author and article information

          Journal
          Small
          Small (Weinheim an der Bergstrasse, Germany)
          Wiley
          1613-6829
          1613-6810
          Jan 09 2012
          : 8
          : 1
          Affiliations
          [1 ] School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
          Article
          10.1002/smll.201101016
          22012880
          b49a7c00-4d69-433c-b3b9-69d6b57d960e
          Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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