Blog
About

  • Record: found
  • Abstract: found
  • Article: found
Is Open Access

Aharonov-Bohm effect in a side-gated graphene ring

Preprint

Read this article at

Bookmark
      There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

      Abstract

      We investigate the magnetoresistance of a side-gated ring structure etched out of single-layer graphene. We observe Aharonov-Bohm oscillations with about 5% visibility. We are able to change the relative phases of the wave functions in the interfering paths and induce phase jumps of pi in the Aharonov-Bohm oscillations by changing the voltage applied to the side gate or the back gate. The observed data can be well interpreted within existing models for 'dirty metals' giving a phase coherence length of the order of 1 micrometer at a temperature of 500mK.

      Related collections

      Most cited references 14

      • Record: found
      • Abstract: found
      • Article: found
      Is Open Access

      The Raman Fingerprint of Graphene

      Graphene is the two-dimensional (2d) building block for carbon allotropes of every other dimensionality. It can be stacked into 3d graphite, rolled into 1d nanotubes, or wrapped into 0d fullerenes. Its recent discovery in free state has finally provided the possibility to study experimentally its electronic and phonon properties. Here we show that graphene's electronic structure is uniquely captured in its Raman spectrum that clearly evolves with increasing number of layers. Raman fingerprints for single-, bi- and few-layer graphene reflect changes in the electronic structure and electron-phonon interactions and allow unambiguous, high-throughput, non-destructive identification of graphene layers, which is critically lacking in this emerging research area.
        Bookmark
        • Record: found
        • Abstract: not found
        • Article: not found

        Significance of Electromagnetic Potentials in the Quantum Theory

          Bookmark
          • Record: found
          • Abstract: found
          • Article: found
          Is Open Access

          Energy Band Gap Engineering of Graphene Nanoribbons

          We investigate electronic transport in lithographically patterned graphene ribbon structures where the lateral confinement of charge carriers creates an energy gap near the charge neutrality point. Individual graphene layers are contacted with metal electrodes and patterned into ribbons of varying widths and different crystallographic orientations. The temperature dependent conductance measurements show larger energy gaps opening for narrower ribbons. The sizes of these energy gaps are investigated by measuring the conductance in the non-linear response regime at low temperatures. We find that the energy gap scales inversely with the ribbon width, thus demonstrating the ability to engineer the band gap of graphene nanostructures by lithographic processes.
            Bookmark

            Author and article information

            Journal
            08 April 2009
            2009-11-19
            0904.1364
            10.1088/1367-2630/12/4/043054

            http://arxiv.org/licenses/nonexclusive-distrib/1.0/

            Custom metadata
            New J. Phys. 12; 043054 (2010)
            cond-mat.mes-hall

            Comments

            Comment on this article