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      Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET

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          Abstract

          Currently, a tunnel field-effect transistor (TFET) is being considered as a suitable electrostatic discharge (ESD) protection device in advanced technology. In addition, silicon-germanium (SiGe) engineering is shown to improve the performance of TFET-based ESD protection devices. In this paper, a new TFET with SiGe source/drain (S/D) regions is proposed, and its ESD characteristics are evaluated using technology computer aided design (TCAD) simulations. Under a transmission line pulsing (TLP) stressing condition, the triggering voltage of the SiGe S/D TFET is reduced by 35% and the failure current is increased by 17% in comparison with the conventional Si S/D TFET. Physical insights relevant to the ESD enhancement of the SiGe S/D TFET are provided and discussed.

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          Most cited references29

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          Tunnel field-effect transistors as energy-efficient electronic switches.

          Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits. © 2011 Macmillan Publishers Limited. All rights reserved
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            Low-Voltage Tunnel Transistors for Beyond CMOS Logic

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              Symmetric U-Shaped Gate Tunnel Field-Effect Transistor

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                Author and article information

                Journal
                Micromachines (Basel)
                Micromachines (Basel)
                micromachines
                Micromachines
                MDPI
                2072-666X
                12 December 2018
                December 2018
                : 9
                : 12
                : 657
                Affiliations
                Shaanxi Key Laboratory of Complex System Control and Intelligent Information Processing, Xi’an University of Technology, Xi’an 710048, China; yangyuan@ 123456xaut.edu.cn (Y.Y.); yunm@ 123456xaut.edu.cn (N.Y.); eenian2@ 123456126.com (J.J.L.)
                Author notes
                [* ]Correspondence: yzn@ 123456xaut.edu.cn ; Tel.: +86-029-823-12431
                Author information
                https://orcid.org/0000-0001-6389-7693
                Article
                micromachines-09-00657
                10.3390/mi9120657
                6316336
                30545073
                b5cfd96e-2bd1-4dbe-b9ab-47d51d5dfe3f
                © 2018 by the authors.

                Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license ( http://creativecommons.org/licenses/by/4.0/).

                History
                : 14 November 2018
                : 09 December 2018
                Categories
                Article

                band-to-band tunneling (btbt),electrostatic discharge (esd),tunnel field-effect transistor (tfet),silicon-germanium source/drain (sige s/d),technology computer aided design (tcad)

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