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Band parameters for nitrogen-containing semiconductors

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Journal of Applied Physics

AIP Publishing

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      Band parameters for III–V compound semiconductors and their alloys

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        Spontaneous polarization and piezoelectric constants of III-V nitrides

        The spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry phase approach to polarization in solids. The piezoelectric constants are found to be up 10 times larger than in conventional III-V's and II-VI's, and comparable to those of ZnO. Further properties at variance with those of conventional III-V compounds are the sign of the piezoelectric constants (positive as in II-VI's) and the very large spontaneous polarization.
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          GaN, AlN, and InN: A review

           S. Strite (1992)
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            Author and article information

            Journal
            Journal of Applied Physics
            Journal of Applied Physics
            AIP Publishing
            0021-8979
            1089-7550
            September 15 2003
            September 15 2003
            : 94
            : 6
            : 3675-3696
            10.1063/1.1600519
            © 2003
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