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Electronic properties of Si-doped Alx Ga1−xN with aluminum mole fractions above 80%

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      Most cited references 24

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      Point-defect complexes and broadband luminescence in GaN and AlN

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        Electronic, optical, and structural properties of some wurtzite crystals

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          Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

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            Author and article information

            Affiliations
            [1 ]Institut für Festkörperphysik, Technische Universität Berlin, EW 6-1, Hardenbergstr. 36, 10623 Berlin, Germany
            [2 ]Department of Physics, Chemistry and Biology (IFM), Semiconductor Materials, University of Linköping, 58183 Linköping, Sweden
            [3 ]Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoffstr. 4, 12489 Berlin, Germany
            Journal
            Journal of Applied Physics
            Journal of Applied Physics
            AIP Publishing
            0021-8979
            1089-7550
            October 14 2016
            October 14 2016
            : 120
            : 14
            : 145702
            10.1063/1.4964442
            © 2016
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