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      Electronic properties of Si-doped Alx Ga1−xN with aluminum mole fractions above 80%

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          Most cited references 24

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          Electronic, optical, and structural properties of some wurtzite crystals

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            Point-defect complexes and broadband luminescence in GaN and AlN

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              Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

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                Author and article information

                Affiliations
                [1 ]Institut für Festkörperphysik, Technische Universität Berlin, EW 6-1, Hardenbergstr. 36, 10623 Berlin, Germany
                [2 ]Department of Physics, Chemistry and Biology (IFM), Semiconductor Materials, University of Linköping, 58183 Linköping, Sweden
                [3 ]Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoffstr. 4, 12489 Berlin, Germany
                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                October 14 2016
                October 14 2016
                : 120
                : 14
                : 145702
                10.1063/1.4964442
                © 2016
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