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      Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

      , , , , , , ,
      Applied Physics Letters
      AIP Publishing

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          Journal
          Applied Physics Letters
          Appl. Phys. Lett.
          AIP Publishing
          0003-6951
          1077-3118
          January 29 1996
          January 29 1996
          : 68
          : 5
          : 643-645
          Article
          10.1063/1.116495
          b6c5f06f-09b8-406e-9aeb-3dc2ca8969c8
          © 1996
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