Critical issues in the heteroepitaxial growth of alkaline-earth oxides on silicon

Schlom, D G; Haeni, J H; Lettieri, J.

doi:10.1116/1.1482710

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Critical issues in the heteroepitaxial growth of alkaline-earth oxides on silicon

Author(s): J. Lettieri , J. H. Haeni , D. G. Schlom

Publication date Created: July 2002

Publication date (Print): July 2002

Journal: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Publisher: American Vacuum Society

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Most cited references 64

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Crystalline Oxides on Silicon: The First Five Monolayers

M. F. Chisholm, F. Walker, R. A. McKee (1998)

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Thermodynamic stability of binary oxides in contact with silicon

D G Schlom, K. J. Hubbard (1996)

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Field effect transistors with SrTiO3 gate dielectric on Si

J. A. Hallmark, R. Droopad, W. Ooms … (2000)

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Journal

Title: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Abbreviated Title: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Publisher: American Vacuum Society

ISSN (Print): 0734-2101

ISSN (Electronic): 1520-8559

Publication date Created: July 2002

Publication date (Print): July 2002

Volume: 20

Issue: 4

Pages: 1332-1340

Article

DOI: 10.1116/1.1482710

SO-VID: b75923ad-12bc-4d53-943d-bf776d4299d0

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Critical issues in the heteroepitaxial growth of alkaline-earth oxides on silicon

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Silicon thin film solar cells

Most cited references 64

Crystalline Oxides on Silicon: The First Five Monolayers

Thermodynamic stability of binary oxides in contact with silicon

Field effect transistors with SrTiO3 gate dielectric on Si

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Article

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