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      Perpendicular magnetic tunnel junction performance under mechanical strain

      Author(s): 1 , 2 , 1 , 2
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Spin-current interaction with a monodomain magnetic body: A model study

          J Sun (2000)
          Article 0 comments Cited 296 times – based on 0 reviews     Review now
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            Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

            E. O’Sullivan, M. Gaidis, P. L. Trouilloud … (2011)
            Article 0 comments Cited 194 times – based on 0 reviews     Review now
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              Spin-transfer torque RAM technology: Review and prospect

              K Ito, T Kawahara, R Takemura … (2012)
              Article 0 comments Cited 61 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: June 04 2018
                Publication date (Print): June 04 2018
                Volume: 112
                Issue: 23
                Page: 232401
                Affiliations
                [1 ]Department of Physics, University of California, Berkeley, California 94720, USA
                [2 ]Samsung Semiconductor Inc., NMT, 3655 N 1st St, San Jose, California 95134, USA
                Article
                DOI: 10.1063/1.5034145
                SO-VID: b7f78744-2da1-4912-9635-9d04ac40cd07
                Copyright © © 2018
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