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      Measurements of Peltier cooling at a Ga‐GaAs interface using a liquid‐phase epitaxy system

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      Journal of Applied Physics
      AIP Publishing

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          Current-Controlled Growth and Dopant Modulation in Liquid Phase Epitaxy

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            Application of the Peltier Effect for the Determination of Crystal Growth Rates

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              Nernst effect in n-type GaAs

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                July 1975
                July 1975
                : 46
                : 7
                : 3002-3005
                Article
                10.1063/1.321988
                b80d426e-2ec8-4d5d-8180-14d7374adc0f
                © 1975
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