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      Heterostructure bipolar transistors and integrated circuits

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      Journal: Proceedings of the IEEE
      Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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          Molecular beam epitaxy

          J.R. Arthur, A.Y. Cho (1975)
          Article 0 comments Cited 191 times – based on 0 reviews     Review now
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            Measurements of bandgap narrowing in Si bipolar transistors

            H.C. de Graaff, J.W. Slotboom (1976)
            Article 0 comments Cited 105 times – based on 0 reviews     Review now
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              Theory of a Wide-Gap Emitter for Transistors

              Herbert Kroemer (1957)
              Article 0 comments Cited 94 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Proceedings of the IEEE
                Abbreviated Title: Proc. IEEE
                Publisher: Institute of Electrical and Electronics Engineers (IEEE)
                ISSN (Print): 0018-9219
                Publication date Created: January 1982
                Publication date (Print): 1982
                Volume: 70
                Issue: 1
                Pages: 13-25
                Article
                DOI: 10.1109/PROC.1982.12226
                SO-VID: b85a6c7e-c09d-4151-8571-a28a70a66e75
                Copyright © © 1982
                History

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