Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

[1 ]National University of Science and Technology MISiS, Moscow 194017, 4 Leninsky Ave., Russia

[2 ]Russia and Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science, 6, Academician Ossipyan str., Chernogolovka, Moscow Region 142432, Russia

[3 ]Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA

[4 ]Department of Chemical and Biological Engineering, Korea University, Seoul 136-713, South Korea

[5 ]Tamura Corporation and Novel Crystal Technology, Inc., Sayama Saitama 350-1328, Japan

[6 ]Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA