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Unstable states of In xAl yGa1-x-yN quaternary alloys

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      Abstract

      Regions of unstable states characterized by the spinodal decomposition of high-Al-content In xAl yGa1-x-yN quaternary alloys lattices matched to the GaN (001) substrate are described. The alloy are represented as strictly regular solutions. In the analysis we take into account the internal deformation and elastic strain energies. The regions of unstable states or ranges of spinodal decomposition considering the compositions 0.06 < x < 0.18 and 0 < y < 0.95 with and without elastic energy are demonstrated up to 580°C. We conclude that high concentrations of aluminum dramatically increased the phase separation temperature.

      Translated abstract

      Se describen las regiones de los estados inestables caracterizados por la descomposición espinodal de las aleaciones cuaternarias In xAl yGa1-x-yN con altos contenidos de Al crecidas sobre el substrato de GaN (001). Las aleaciones son representadas como soluciones estrictamente regulares. En el análisis tomamos en cuenta las energías de deformación interna y elástica. Se muestran las regiones de los estados inestables o los rangos de la descomposición espinodal considerando las composiciones de 0.06 < x < 0.18 y 0 < y < 0.95 con y sin la energía elástica hasta 580°C. Concluimos que altas concentraciones de aluminio incrementa dramáticamente la temperatura de separación de fase.

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      Influence of indium and phosphine on Au-catalyzed InP nanowire growth on Si substrates

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        Exciton-related electroluminescence from monolayer MoS2

        Excitons in MoS2 dominate the absorption and emission properties of the two-dimensional system. Here, we study the microscopic origin of the electroluminescence from monolayer MoS2 fabricated on a heavily p-type doped silicon substrate. By comparing the photoluminescence and electroluminescence of a MoS2 diode, direct-exciton and bound-exciton related recombination processes can be identified. Auger recombination of the exciton-exciton annihilation of bound exciton emission is observed under a high electron-hole pair injection rate at room temperature. We expect the direct exciton-exciton annihilation lifetime to exceed the carrier lifetime, due to the absence of any noticeable direct exciton saturation. We believe that our method of electrical injection opens a new route to understand the microscopic nature of the exciton recombination and facilitate the control of valley and spin excitation in MoS2.
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          Weak-link behavior of grain boundaries in superconducting Ba(Fe[sub 1−x]Co[sub x])[sub 2]As[sub 2] bicrystals

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            Author and article information

            Affiliations
            [1 ] Instituto Politécnico Nacional Mexico
            Contributors
            Role: ND
            Role: ND
            Journal
            rmf
            Revista mexicana de física
            Rev. mex. fis.
            Sociedad Mexicana de Física (México )
            0035-001X
            April 2010
            : 56
            : 2
            : 132-134
            S0035-001X2010000200006

            http://creativecommons.org/licenses/by/4.0/

            Product
            Product Information: SciELO Mexico
            Categories
            Physics, Multidisciplinary

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