Mechanically-induced reverse phase transformation of MoS <sub>2</sub>from stable 2H to metastable 1T and its memristive behavior

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Abstract

The reverse phase transformation of MoS ₂from stable 2H to metastable 1T could be mechanically induced by ball-milling. Furthermore, the mechanically generated 1T MoS ₂exhibited memristive behavior.

Abstract

The 1T phase of MoS ₂is attracting much attention due to its metallic property and potential applications for supercapacitors, photothermal agents, and memristors. However, because the 1T phase is metastable, it can easily be transferred to the stable 2H phase by heating. In this work, it is the first time we observe the mechanically-induced reverse phase transformation (from stable 2H to metastable 1T) for MoS ₂by HAADF-STEM images. Furthermore, XPS revealed that the content of the 1T phase increased with increasing mechanical ball-milling time. Furthermore, the mechanically generated 1T MoS ₂exhibited memristive behavior.

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Most cited references 57

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Emerging photoluminescence in monolayer MoS2.

Andrea Splendiani, Liang Sun, Yuanbo Zhang … (2010)

Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS(2) provides new opportunities for engineering the electronic structure of matter at the nanoscale.

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Single-layer MoS2 transistors.

B Radisavljevic, A Radenovic, J Brivio … (2011)

Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene, both because of its rich physics and its high mobility. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films or requires high voltages. Although single layers of MoS(2) have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5-3 cm(2) V(-1) s(-1) range are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS(2) mobility of at least 200 cm(2) V(-1) s(-1), similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 10(8) and ultralow standby power dissipation. Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors. Monolayer MoS(2) could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.

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Atomically Thin\({\mathrm{MoS}}_{2}\): A New Direct-Gap Semiconductor

Kin Fai Mak, Changgu Lee, James Hone … (2011)

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Author and article information

Journal

Journal ID (publisher-id): RSCACL

Title: RSC Advances

Abbreviated Title: RSC Adv.

Publisher: Royal Society of Chemistry (RSC)

ISSN (Electronic): 2046-2069

Publication date Created: 2016

Publication date (Electronic): 2016

Volume: 6

Issue: 70

Pages: 65691-65697

Affiliations

[1 ]Department of Materials Science and Engineering

[2 ]Michigan Technological University

[3 ]Houghton

[4 ]USA

[5 ]University of Michigan

[6 ]Ann Arbor

Article

DOI: 10.1039/C6RA12735E

SO-VID: b994871a-6d24-4e72-a52c-40bd82cb446b

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