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      Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition

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          Abstract

          Large-area MoS2 atomic layers are synthesized on SiO2 substrates by chemical vapor deposition using MoO3 and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS2 monolayer. The TEM images verify that the synthesized MoS2 sheets are highly crystalline.

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          Atomically thin MoS2: A new direct-gap semiconductor

          The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N = 1, 2, ... 6 S-Mo-S monolayers have been investigated by optical spectroscopy. Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure. With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 0.6 eV. This leads to a crossover to a direct-gap material in the limit of the single monolayer. Unlike the bulk material, the MoS2 monolayer emits light strongly. The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 1000 compared with the bulk material.
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            Atomic layers of hybridized boron nitride and graphene domains.

            Two-dimensional materials, such as graphene and monolayer hexagonal BN (h-BN), are attractive for demonstrating fundamental physics in materials and potential applications in next-generation electronics. Atomic sheets containing hybridized bonds involving elements B, N and C over wide compositional ranges could result in new materials with properties complementary to those of graphene and h-BN, enabling a rich variety of electronic structures, properties and applications. Here we report the synthesis and characterization of large-area atomic layers of h-BNC material, consisting of hybridized, randomly distributed domains of h-BN and C phases with compositions ranging from pure BN to pure graphene. Our studies reveal that their structural features and bandgap are distinct from those of graphene, doped graphene and h-BN. This new form of hybrid h-BNC material enables the development of bandgap-engineered applications in electronics and optics and properties that are distinct from those of graphene and h-BN.
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              Electronic structure ofMoSe2,MoS2, andWSe2. I. Band-structure calculations and photoelectron spectroscopy

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                Author and article information

                Journal
                24 February 2012
                Article
                10.1002/adma.201104798
                22467187
                1202.5458
                b9aaa8cc-22a5-4a6e-a804-9118aaeb1255

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

                History
                Custom metadata
                First submitted on 12-Dec-2011. Accepted in Adv. Mater
                cond-mat.mtrl-sci

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