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      Single-Layer MoS2 Phototransistors

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          Abstract

          A new phototransistor based on the mechanically-exfoliated single-layer MoS2 nanosheet is fabricated and its light-induced electric properties are investigated in details. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms and it shows good stability. Especially, the single-layer MoS2 phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching and good photoresponsivity from the MoS2 phototransistor pave an avenue to develop the single-layer semiconducting materials for multi-functional optoelectronic device applications in future.

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          Author and article information

          Journal
          30 October 2013
          Article
          10.1021/nn2024557
          1310.8066
          b9b42754-3d54-4bf4-993c-6b1503cc9f95

          http://arxiv.org/licenses/nonexclusive-distrib/1.0/

          History
          Custom metadata
          ACS Nano, 2012, 6(1), 74-80
          28 pages
          cond-mat.mtrl-sci

          Condensed matter
          Condensed matter

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