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      Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3

      Author(s): , , , , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

          Toshio Matsushita, Shuji Nakamura, Masayuki Senoh … (1996)
          Article 0 comments Cited 523 times – based on 0 reviews     Review now
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            High dislocation densities in high efficiency GaN‐based light‐emitting diodes

            D. Steigerwald, F. Ponce, S. D. Lester … (1995)
            Article 0 comments Cited 235 times – based on 0 reviews     Review now
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              Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

              S. Keller, B. Heying, S. DenBaars … (1996)
              Article 0 comments Cited 165 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: September 15 1996
                Publication date (Print): September 15 1996
                Volume: 80
                Issue: 6
                Pages: 3228-3237
                Article
                DOI: 10.1063/1.363264
                SO-VID: b9e5a572-5420-4f33-b04a-8dcefbb8aa06
                Copyright © © 1996
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