Heterojunction bipolar transistors using Si-Ge alloys

Patton, G.L.; Harame, D.L.; Meyerson, B.S.; Stork, J.M.C.; Iyer, S.S.

doi:10.1109/16.40887

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Heterojunction bipolar transistors using Si-Ge alloys

Author(s): S.S. Iyer , G.L. Patton , J.M.C. Stork , B.S. Meyerson , D.L. Harame

Publication date (Print): Oct. 1989

Journal: IEEE Transactions on Electron Devices

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

J. C. Bean, R. People (1985)

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GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

J. C. Bean, L Feldman, A. Fiory … (1984)

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Heterostructure bipolar transistors and integrated circuits

H Kroemer (1982)

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Journal

Title: IEEE Transactions on Electron Devices

Abbreviated Title: IEEE Trans. Electron Devices

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 00189383

Publication date (Print): Oct. 1989

Volume: 36

Issue: 10

Pages: 2043-2064

Article

DOI: 10.1109/16.40887

SO-VID: ba3f4951-07ad-47d9-990e-bca82e0b0f94

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Heterojunction bipolar transistors using Si-Ge alloys

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High Entropy Alloys and Complex Concentrated Alloys

Most cited references 95

Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

Heterostructure bipolar transistors and integrated circuits

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