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      Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

      , , , ,
      Applied Physics Letters
      AIP Publishing

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          High dislocation densities in high efficiency GaN‐based light‐emitting diodes

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            Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

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              Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                January 27 1997
                January 27 1997
                : 70
                : 4
                : 420-422
                Article
                10.1063/1.118322
                baad6faf-ebb7-4f6b-8d6d-626092359a5d
                © 1997
                History

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