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      Mapping the Electrical Properties of ZnO-Based Transparent Conductive Oxides Grown at Room Temperature and Improved by Controlled Postdeposition Annealing

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          Hydrogen as a cause of doping in zinc oxide

          Zinc oxide, a wide-band-gap semiconductor with many technological applications, typically exhibits n-type conductivity. The cause of this conductivity has been widely debated. A first-principles investigation, based on density functional theory, produces strong evidence that hydrogen acts as a source of conductivity: it can incorporate in high concentrations and behaves as a shallow donor. This behavior is unexpected and very different from hydrogen's role in other semiconductors, in which it acts only as a compensating center and always counteracts the prevailing conductivity. These insights have important consequences for control and utilization of hydrogen in oxides in general.
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            New figure of merit for transparent conductors

            G. Haacke (1976)
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              Oxygen vacancies in ZnO

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                Author and article information

                Journal
                Advanced Electronic Materials
                Adv. Electron. Mater.
                Wiley
                2199160X
                January 2016
                January 2016
                November 18 2015
                : 2
                : 1
                : 1500287
                Affiliations
                [1 ]CENIMAT/I3N; Departamento de Ciencia dos Materiais; Faculdade de Ciencias e Tecnologia; Universidade Nova de Lisboa, and CEMOP-UNINOVA; 2829-516 Caparica Portugal
                Article
                10.1002/aelm.201500287
                baceeec6-c05d-4b24-b936-8e07bd86d76b
                © 2015

                http://doi.wiley.com/10.1002/tdm_license_1.1

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