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      Fabrication and characterization of In0.52Al0.48As/In0.53Ga0.47As E/D-HEMTs on InP substrates

      Author(s): , ,
      Publication date Created:
      Publication date (Print):
      Journal: Solid-State Electronics
      Publisher: Elsevier BV

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          Journal
          Title: Solid-State Electronics
          Abbreviated Title: Solid-State Electronics
          Publisher: Elsevier BV
          ISSN (Print): 00381101
          Publication date Created: May 2006
          Publication date (Print): May 2006
          Volume: 50
          Issue: 5
          Pages: 758-762
          Article
          DOI: 10.1016/j.sse.2006.04.029
          SO-VID: bad9fb1a-cdfd-4627-9a88-14633d65a5d4
          Copyright © © 2006
          License:

          https://www.elsevier.com/tdm/userlicense/1.0/

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